Impact scenarios in boron carbide: A computational study

Boron carbide/n-silicon carbide heterojunction diodes

Magnetoresistance in boron carbide junctions

A Free Energy Model of Boron Carbide

Pittsburgh, PA UNITED STATES Corresponding Author Secondary Information: Corresponding Author's Institution: Corresponding Author's Secondary Institution: First Author: William P. Huhn First Author Secondary Information: Order of Authors: William P. Huhn Michael Widom Order of Authors Secondary Information: Abstract: The assessed binary phase diagram of boron-carbon exhibits a single intrinsica...

Superconductivity in heavily boron-doped silicon carbide.

The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped ...

Breaking the icosahedra in boron carbide.

Findings of laser-assisted atom probe tomography experiments on boron carbide elucidate an approach for characterizing the atomic structure and interatomic bonding of molecules associated with extraordinary structural stability. The discovery of crystallographic planes in these boron carbide datasets substantiates that crystallinity is maintained to the point of field evaporation, and character...